车载MOSFET新型SMD封装“S-TOGL™”介绍
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S-TOGL™通过新的封装技术实现了高电流密度、低损耗和低发热量特性。
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2:06
S-TOGL™通过新的封装技术实现了高电流密度、低损耗和低发热量特性。
This design is the gate drive circuit for high-current/high-voltage SiC MOSFET module. It can be installed on Toshiba dual MOSFET modules. Design files and guides for circuit design and operation are available as reference design.
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This video briefly introduces the functions of the Online Circuit Simulator, a MOSFET selection tool that can simulate circuits on the Web.
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