2:59
采用3相图腾柱拓扑结构和1200V SiC MOSFET，支持312V至528V 3相AC输入，在750V DC电压下可提供高达10kW的功率。 适合使用3相AC电源输入的电动汽车充电桩和各种工业设备等应用。
This is a reference design for a 200 W isolated DC-DC converter using an active clamp forward topology, which uses Nch MOSFETs for the clamp switches.
4:32
提供IH电磁炉逆变电路的各种设计信息，在根据实际规格进行设计时，可减少所需的工作量。
2:00
This explains the operational overview of the phase-shifted full-bridge circuit adopted in this design, helping to reduce the effort required for actual design work.
4:42
用于评估智能栅极驱动耦合器（TLP5214、TLP5214A、TLP5212）各种功能运行情况的参考设计评估板。
3:30
With a wide input voltage range of 36V to 75V, it can be applied to various products, especially those using 48V systems. Equipped with our new power MOSFETs, achieving high efficiency on a compact board.
4:05
Introduces methods for adding features such as abnormality detection when designing DC motor control using an H-bridge driver circuit.
5:03
