Toshiba's LDO achieves industry's best-in-1 class ripple rejection ratio and load transient response. This helps to minimize output voltage fluctuations.
We succeeded in improving the efficiency of the U-MOSⅨ-H installed in a DC-DC converter by improving the trade-off between the ON resistance and the electric charge.
U-MOS IX-H has achieved a best-in-class reduction of Ron・Qoss by adopting Process Technology and Packaging Technology.
(*The best-in-class reduction : Surveyed by Toshiba Electronic Devices & Storage Corporation in December/2017)
This video is introducing about US2H and TSOP6F package which have achieved a small and high power disipation. It offers low thermal resistance up to 22% compare with same size package class.
TOSHIBA DTMOSⅥ series help to improve the efficiency of switching power supply by reduction of Ron・Qgd.
With an optimized chip design, the π-MOS IX series provides lower peak EMI noise than the current π-MOS VII series, while maintaining the same level of efficiency.
Why not realize cooling performance of DSOP Advance package,“Double side cooling” on Toshiba power MOSFETs? We offer a package with double side cooling capability, which has an heat spreader (topside metal plate)...