TOSHIBA DTMOSⅥ series help to improve the efficiency of switching power supply by reduction of Ron・Qgd.
Toshiba's TVS Diode achieves top level low dynamic resistance and low clamping voltages.
It protects devices from performance declines and internal circuit destruction. EAP-V offers lower clamping voltage than competitor's processes. It achieves High
Why not realize cooling performance of DSOP Advance package,“Double side cooling” on Toshiba power MOSFETs? We offer a package with double side cooling capability, which has an heat spreader (topside metal plate)...
We succeeded in improving the efficiency of the U-MOSⅨ-H installed in a DC-DC converter by improving the trade-off between the ON resistance and the electric charge.
This reference board is an evaluation board for Aruduino. It incorporates a TB6605FTG and can be used for prototyping. This system is suitable for small appliances, such as electric fans and water purifiers.
This video is introducing about US2H and TSOP6F package which have achieved a small and high power disipation. It offers low thermal resistance up to 22% compare with same size package class.
U-MOS IX-H has achieved a best-in-class reduction of Ron・Qoss by adopting Process Technology and Packaging Technology.
(*The best-in-class reduction : Surveyed by Toshiba Electronic Devices & Storage Corporation in December/2017)